FIELD: physics.
SUBSTANCE: fabrication of GaAs-based photo inverter comprises growth by liquid-phase epitaxy on n-GaAs substrate of buffer n-GaAs ply, base n-GaAs ply, emitter p-GaAs ply and p-AlGaAs ply with Al content in solid phase of 30-40 at % at the growth start and Al content in solid phase of 10-15 at % in the ply surface area. Rear contact and face contact are deposited. Anti-reflection coating is applied on substrate face surface.
EFFECT: safe process, lower costs, higher efficiency of conversion of laser radiation.
9 cl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF MAKING GAAS-BASED PHOTOCELL | 2015 |
|
RU2607734C1 |
| METHOD OF MAKING PULSE PHOTODETECTOR | 2018 |
|
RU2676221C1 |
| METHOD OF MAKING PHOTOELECTRIC CONVERTER BASED ON GERMANIUM | 2008 |
|
RU2377697C1 |
| METHOD FOR PRODUCTION OF GaSb-BASED PHOTOCONVERTER | 2014 |
|
RU2575972C1 |
| METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTER BASED ON GaInAsSb | 2023 |
|
RU2813746C1 |
| METHOD OF MAKING PHOTOELECTRIC CONVERTER CHIPS | 2008 |
|
RU2391744C1 |
| LASER RADIATION PHOTOCONVERTER | 2016 |
|
RU2646547C1 |
| CASCADE PHOTOCONVERTER AND METHOD OF MAKING SAID PHOTOCONVERTER | 2008 |
|
RU2382439C1 |
| METHOD FOR PREPARATION OF PHOTOELECTRIC TRANSDUCER | 2007 |
|
RU2354008C1 |
| METHOD FOR MANUFACTURING OF MULTILAYER PHOTOCONVERTER CHIPS | 2007 |
|
RU2368038C1 |
