FIELD: solar energy.
SUBSTANCE: invention relates to solar energy, in particular to photovoltaic converters, and can be used in the electronics industry to convert light energy into electrical energy. The photoelectric converter includes a substrate, a photosensitive А3В5 heterostructure with a wide-gap window and a GaAs p-type contact layer, an antireflection coating on the surface of a wide-gap window in places free from a front ohmic contact, a front ohmic contact on the surface of a GaAs contact layer containing Ag and Au layers, and a rear ohmic contact. According to the invention, the frontal ohmic contact contains a first layer of a nickel and chromium alloy (NiCr) arranged in series with a chromium content in the alloy (15-50) wt.% with a thickness of (5-25) nm, an Ag layer with a thickness of (500-5000) nm, a second layer of NiCr alloy with a chromium content in the alloy (15-50) wt.% with a thickness of (50-100) nm and an Au layer with a thickness of (30-100) nm.
EFFECT: photoelectric converter according to the invention has an increased electrical conductivity of the contact lines by increasing the adhesion of the contact layers and reducing ohmic losses by reducing the contact resistance.
1 cl, 3 ex
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Authors
Dates
2021-09-28—Published
2021-03-26—Filed