FIELD: chemistry.
SUBSTANCE: invention relates to tantalum carbide-covered carbon material and method for manufacturing thereof. Tantalum carbide-covered carbon material contains carbon substrate and tantalum carbide film, which covers it. When measuring sample of tantalum carbide-covered carbon material with alteration of orientation angle (α), tantalum carbide covering film has maximal value of diffraction peak, corresponding to tantalum carbide plane (311), determined by means of X-ray diffraction at orientation angle (α) at least 80 degrees. Method for manufacturing tantalum carbide-covered carbon material due to formation of tantalum carbide-covering film on carbon substrate includes formation of crystalline tantalum carbide nuclei on carbon substrate surface at temperatures from 850 to 950°C and realisation of growth of crystalline tantalum carbide nuclei at heating with gradual increase of working temperature, at which 50°C or more difference in temperatures is provided.
EFFECT: provision of tantalum carbide-covered carbon material, which is thermally stable and resistant to gas etching.
29 cl, 27 dwg, 11 tbl, 10 ex
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