MONOCRYSTAL SiC AND METHOD OF ITS PRODUCTION Russian patent published in 2000 - IPC

FIELD: semiconductor technology; manufacture of light-emitting diodes, optical elements, etc. SUBSTANCE: surface o monocrystal α-SiC substrate 1 is so treated that its roughness is equal to or is lesser than standard deviation of 2000 A; it is preferable to have roughness equal to or lesser than 1000 A. Polycrystalline α-SiC film 2 is grown on surface 1a of monocrystal substrate 1 from gaseous phase gaseous phase by thermal chemical precipitation, after which complex M is transferred to porous carbon container 3 whose outer surface is coated with α-SiC powder 4. Complex M is subjected to heat treatment at high temperature equal to or lesser than film growing temperature, i.e. from 1900 to 2400 C in flow of argon gas owing to which monocrystal α-SiC is integrally grown on monocrystal α-SiC substrate 1 on basic of crystal growth and recrystallization of polycrystal α-SiC film 2. Thus, α-SiC monocrystal of large size and high quality is obtained where nucleoli of crystal are generated. EFFECT: enhanced efficiency. 12 cl, 4 dwg