PHOTORESISTOR BUILT AROUND HETEROEPITAXIAL STRUCTURE CdHgTe (ALTERNATIVES) Russian patent published in 2005 - IPC

FIELD: luminous radiation recording and measurement.

SUBSTANCE: proposed resistor built around heteroepitaxial structure CdHgTe has insulating substrate that carries at least one substrate of sensing element made of CdZnTe or GaAs, or Si mounting sensing element in the form of heteroepitaxial structure; the latter has lower graded band-gap layer of Cd_xHg_{1 - x}Te, where x varies between 0.8 ± 0.5 and 0.3 ± 0.05 in direction from substrate; working layer of Cd_xHg_{1 - x}Te, where x = 0.3 ± 0.05; upper graded band-gap layer of Cd_xHg_{1 - x}Te, where x varies between 0.3 ± 0.05 and 0.8 in direction from substrate; and antireflecting coating. Alternative composition of working layer and, consequently, concentration gradient in graded band-gap layer is also proposed.

EFFECT: extended spectral sensitivity region; eliminated surface recombination to enhance integral detection capability.

12 cl, 1 dwg