FIELD: chemistry.
SUBSTANCE: composition contains (A) one type of the inorganic particles, which are dispersed in a liquid medium (C), (B) one type of the polymer particles, which are dispersed in the liquid medium (C), (C) liquid medium, where zeta-potential of the inorganic particles (A) in the liquid medium (C) and zeta-potential of the polymer particles in the liquid medium (C) are positive. The polymer particles (B) represent a copolymer, containing styrene and/or divinylbenzene and methacrylamide, and have the type of a functional group, which is a dialkylamino-group or imidazole group. The weight ratio of the polymer particles (B) to the inorganic particles (A) is in the interval from 0.001 to 0.06, and the pH value of the composition is in the interval from 4 to 6. Also described is the method of obtaining a composition for chemical-mechanical polishing, a method for production of semiconductor devices, including chemical-mechanical polishing and the application of the composition for chemical-mechanical polishing of the surfaces of the substrates, used in the semiconductor industry and for devices with narrow-gap insulation.
EFFECT: improvement of polishing characteristics, especially with respect to the intensity of material removal and the step of height reduction.
12 cl, 6 tbl, 9 ex, 4 dwg
