FIELD: chemistry; technological processes.
SUBSTANCE: invention relates to novel aqueous polishing compositions which are especially suitable for polishing semiconductor substrates, comprising films based on silicon oxide dielectric material and polysilicon, optionally comprising silicon nitride-based films. Composition contains (A) cerium oxide abrasive particles and (B) amphiphilic nonionic surfactants, selected from water-soluble and water-dispersible, linear and branched polyoxyalkylene block copolymers of general formula I: R[(B1)m/(B2)nY]p (I), where m, n and p are integers ≥ 1; R denotes a hydrogen atom or a univalent or polyvalent organic residue, except C5-C20 alkyl groups, (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units, where substitutes are selected from two methyl groups, alkyl groups having more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y denotes a hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with proviso that when (B) contains more than one block (B1) or (B2), two blocks of same type are separated by a block of other type (B1) or (B2).
EFFECT: composition has considerably improved oxide/polysilicon selectivity and enables to obtain polished plates having excellent global and local flatness.
17 cl, 3 tbl, 9 ex
