COMPOSITION FOR CHEMICAL-MECHANICAL POLISHING (CMP) CONTAINING NON-ION SURFACTANT AND CARBONATE SALT Russian patent published in 2018 - IPC C09G1/02 C09G1/04 C09K3/14 

Abstract RU 2643541 C9

FIELD: chemistry.

SUBSTANCE: invention relates to a composition for chemical-mechanical polishing (CMP). The composition contains (A) mineral particles, organic particles, or their mixture or their composite, where particles are in the form of a cocoon, (B) amphiphilic non-ion surfactant based on polyoxymethylen-polyoxypropylene alkyl simple ether in the form of a mixture of molecules containing on average an alkyl group having 10 to 16 carbon atoms, 5 to 20 oxyethylene monomer units (b21), and 2 to 8 oxypropylene monomer units (b22) in a random distribution, (C) carbonate or hydrocarbonate salt, (D) alcohol, and (M) an aquatic medium. A method for producing semiconductor devices is also disclosed, comprising chemical-mechanical polishing a substrate used in the semiconductor industry, in the presence of a CMP composition, and using a CMP composition.

EFFECT: improving the compound properties.

16 cl, 4 dwg, 2 tbl, 2 ex

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RU 2 643 541 C9

Authors

Rajkhardt Robert

Li Yuzhuo

Lauter Mikhael

Chiu Vej Lan Uilyam

Dates

2018-02-02Published

2013-06-21Filed