AQUEOUS POLISHING COMPOSITION AND METHOD FOR CHEMICAL-MECHANICAL POLISHING OF SUBSTRATES, HAVING STRUCTURED OR UNSTRUCTURED DIELECTRIC LAYERS WITH LOW DIELECTRIC CONSTANT Russian patent published in 2016 - IPC C09G1/02 H01L21/306 

Abstract RU 2589482 C2

FIELD: technological processes.

SUBSTANCE: invention is aimed at a novel polishing composition which is especially suitable for polishing substrates, having structured or unstructured dielectric layers with low or ultralow dielectric constant. Aqueous polishing composition contains (A) abrasive particles selected from a group consisting of silicon oxide, cerium oxide and mixtures thereof, and (B) at least one amphiphilic nonionic surfactant selected from a group consisting of water-soluble or dispersible in water surfactants, having (b1) hydrophobic group selected from a group consisting of branched alkyl groups, having 5-20 carbon atoms; and (b2) hydrophilic groups, selected from a group consisting of polyoxyalkylene groups, containing (b21) oxyethylene monomer links and (b22) substituted oxyalkylene monomer links in which substitutes are selected from a group consisting of alkyl, cycloalkyl or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; where said polyoxyalkylene group contains monomer links (b21) and (b22) in an aggregate, alternating, gradient and/or block-like distribution. Composition is used for production of electrical, mechanical and optical devices.

EFFECT: composition has especially high selectivity with respect to silicon dioxide in comparison with materials with low and ultralow dielectric constant.

15 cl, 2 tbl, 2 ex

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RU 2 589 482 C2

Authors

Raman Vidzhaj Immanuel

Rittig Frank

Li Yujchzho

Chiu Vej Lan Uilyam

Dates

2016-07-10Published

2011-10-04Filed