FIELD: chemistry.
SUBSTANCE: group of inventions refers to polymer chemistry and can be used in the semiconductor industry. Composition for chemical-mechanical polishing contains (A) abrasive particles of cerium dioxide; (B) one or more polymers. Each macromolecule of polymers contains (i) one or more anionic functional groups and (ii) one or more structural units (AO)a-R. A represents CxH2x, x=2–4; a=5–200. R is hydrogen or a branched or linear alkyl group having from 1 to 4 carbon atoms. In the polymer, the sum of the molar masses of all structural units (ii) is at least 50 % of the molar mass of said polymer (B). To obtain a semiconductor device, a chemical-mechanical polishing of the substrate is carried out in the presence of a composition for chemical-mechanical polishing. Polymer (B) is used to suppress the agglomeration of particles containing cerium dioxide and / or to establish the zeta potential of particles containing cerium dioxide.
EFFECT: improved polishing efficiency, high silica removal rate and controlled selectivity are provided.
18 cl, 1 dwg, 13 tbl
