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(19)

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2 598 046

(13)

(51)

IPC

C09G1/02(2006-01-01)

C09G1/04(2006-01-01)

C09K3/14(2006-01-01)

H01L21/304(2006-01-01)

(21) (22)

Application

2014129612/05, 2011-12-21

(24)

Start date

2011-12-21

(22)

Actual filing date

2011-12-21

(45)

Published

2016-09-20

(72)

Inventor

Raman Vidzhaj ImmanuilLi YuzhioShade KristianVenkataraman Shiam SundarSu Ison Yu-ShenUsman Ibrakhim Shejk Ansar

(73)

Holder

Basf Se

COMPOSITION FOR CHEMICAL-MECHANICAL POLISHING CONTAINING POLYVINYL PHOSPHON ACID AND DERIVATIVES THEREOF Russian patent published in 2016 - IPC C09G1/02 C09G1/04 C09K3/14 H01L21/304

Abstract RU 2598046 C2

FIELD: chemistry.

SUBSTANCE: invention mainly relates to composition for chemical-mechanical polishing (CMP) and its application in polishing semiconductor industry substrates. Composition contains (A) inorganic particles, organic particles or mixture thereof, or their composite, (B) at least one type of polyvinyl phosphone acid or its salt as dispersant or agent for treatment of charge, (C) aqueous medium and (D) sugar alcohol as SiN suppressor. Invention also relates to method of producing semiconductor devices, which involves polishing of substrate in presence of said composition and use of composition for polishing substrate containing silicon nitride and/or polysilicon.

EFFECT: composition exhibits improved polishing characteristics.

9 cl, 3 tbl

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RU 2 598 046 C2

Authors

Raman Vidzhaj Immanuil

Li Yuzhio

Shade Kristian

Venkataraman Shiam Sundar

Su Ison Yu-Shen

Usman Ibrakhim Shejk Ansar

Dates

2016-09-20—Published

2011-12-21—Filed