FIELD-EFFECT TRANSISTOR ON GAS PHASE-PRECIPITATED DIAMOND FILM WITH DELTA-DOPED CONDUCTIVE CHANNEL Russian patent published in 2016 - IPC H01L29/778 

FIELD: instrument engineering.

SUBSTANCE: in the field-effect transistor on vapor-deposited diamond film with delta-doped conductive channel including non-doped diamond substrate, deposited on it from gas phase diamond film consisting of applied successively non-doped buffer layer, thin delta-doped layer and non-doped cover layer, as well as metal source and drain contacts and locking contact separated from the cover layer by insulator layer, doped delta-layer of delta-doped conductive channel is deposited from gas phase in such a way that concentration profile of dopant in delta-doped conducting channel has two symmetrical relative to the centre of delta-doped conductive channel and separated by distance of not more than 3 nm of maximum, between which there is a local minimum, in the centre of which concentration of dopant is one order less than in peaks.

EFFECT: invention provides faster operation of transistor.

1 cl, 5 dwg