METHOD OF PRODUCING SILICON FILM ON SUBSTRATE SURFACE BY VAPOUR DEPOSITION Russian patent published in 2011 - IPC H01L31/18 H01L21/205 

FIELD: physics.

SUBSTANCE: method of producing a silicon film on a substrate surface by vapour deposition, starting from a silicon-based precursor, characterised by that the precursor used is silicon tetrachloride. The coated substrate is cleaned or textured, then diffused out of the vapour phase or another dopant source at temperature from 800 to 1000°C; a glass layer formed during diffusion is removed; a thin antireflection coating is deposited on the electronically active silicon film, and then metal contacts are alloyed in on the front and back surfaces of the coated substrate by screen printing using temperature step.

EFFECT: reduced fire hazard of the process, as well as cost owing to simpler safety measures.

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