MONOLITHIC INTEGRATED CIRCUIT OF PROTECTIVE DEVICE Russian patent published in 2016 - IPC H01L27/06 

Abstract RU 2581764 C1

FIELD: manufacturing technology.

SUBSTANCE: invention relates to microwave monolithic integrated circuits and is intended for protection of low-noise amplifiers at inlet of receivers of microwave equipment. Monolithic integrated circuit protection device containing at inlet group of pin-diodes connected through piece of micro strip line with group of diodes at output circuit is fact that output diodes are in form of Motta diodes, active areas of which are formed from part of layer of i-conductivity type initial epitaxial structure consisting of following sequence of layers: layer of p+-type conductivity, layer of i-conductivity type, or ν-, or π-types, and n+-type conductivity lying on semi-insulating substrate.

EFFECT: technical result of invention consists in simplified configuration of initial epitaxial structure, from which circuit is made, reduced costs, simplified technology of manufacturing scheme.

1 cl, 1 dwg

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RU 2 581 764 C1

Authors

Jushchenko Aleksej Jurevich

Ajzenshtat Gennadij Isaakovich

Dates

2016-04-20Published

2015-01-12Filed