MICROWAVE INTEGRATED CIRCUIT Russian patent published in 1997 - IPC

FIELD: semiconductor engineering; integrated circuits, primarily of extremely high-frequency range, especially in its short-wave part. SUBSTANCE: microwave integrated circuit has sections of transmission lines, matching components, active and passive elements formed on insulated chips. In addition, it has isolated sections of thin-layer dielectric material which brace circuit components together. Provision is made for replacing chips on semi-insulating substrate by those on highly doped substrate. When size of monolithic circuit is small, use may be made of one section of thin-layer dielectric material for bracing its components together. EFFECT: improved design. 2 cl, 3 dwg