MONOLITHIC MICROWAVE INTEGRATED CIRCUIT MANUFACTURING PROCESS Russian patent published in 1999 - IPC

Abstract RU 2130215 C1

FIELD: semiconductor electronics; production of integrated circuits operating primarily in extremely high-frequency bands and built in waveguide assemblies. SUBSTANCE: in the course of plate separation into separate circuits, each chip incorporating separate circuit is divided by selective etching into set of chips of smaller size at the same time removing largest part of circuit substrate; layout of photoresist masking sections is chosen during separation so that side planar chips meant for circuit mounting in waveguide are oriented according to planes. EFFECT: reduced microwave power loss and facilitated circuit wiring. 5 cl, 4 dwg

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RU 2 130 215 C1

Authors

Bozhkov V.G.

Kurkan K.I.

Genneberg V.A.

Dates

1999-05-10Published

1992-08-14Filed