MICROWAVE DEVICE Russian patent published in 1997 - IPC

FIELD: semiconductor electronics; monolithic microwave integrated circuits, especially those operating in extremely-high frequency band. SUBSTANCE: monolithic microwave integrated circuit of device has metal sections of transmission line, matching components, and isolated chips that function to joint together all parts to form monolith and to perform the functions of passive and active elements; some chips are used to facilitate installation of circuit into waveguide assembly. Novelty is that bearing structure of circuit components is metallized surface and not substrate. Isolated chips of circuit perform various functions: some of them carry active and passive elements, others serve to join together metal parts of circuit into integral unit, and still other chips are used to secure circuit on installation site in waveguide assembly. EFFECT: reduced microwave power loss, simplified installation of integrated circuit in waveguide assembly. 2 cl, 4 dwg