MONOLITHIC INTEGRATED CIRCUIT OF HIGH-POWER UHF SWITCH Russian patent published in 2023 - IPC H01P5/12 

FIELD: semiconductor devices.

SUBSTANCE: in a monolithic integrated circuit of a powerful UHF switch, an additional microstrip line and metal electrodes of the upper plates of the capacitors are formed on top of the dielectric between the input and output of the UHF signal, while the microstrip line is connected in series with the input of the UHF signal, and the capacitors in parallel.

EFFECT: reduction in input losses of powerful UHF switches, as well as an increase in the level of permissible input power, and an increase in the reliability of the device.

2 cl, 4 dwg