MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2018 - IPC H01L27/00 

FIELD: electrical engineering.

SUBSTANCE: declared microwave integrated circuit, containing a dielectric substrate of diamond, on the reverse side of which a metallization coating is made, the elements of the integrated circuit are active and passive elements, transmission lines, leads, in the dielectric substrate of diamond are made through metallized holes, by means of which the integrated circuit is grounded, the elements of the integrated circuit are made monolithically and connected according to its electrical circuit. In this case, active and passive elements, transmission lines and terminals are planar on the front side of the dielectric substrate of diamond, wherein each active element is buried in a dielectric substrate of diamond by the thickness of its epitaxial structure, respectively, while active and passive elements, transmission lines and pins are designed to provide a single planar plane.

EFFECT: improvement of electrical characteristics – output power, efficiency, increase the reproducibility and reliability of the microwave integrated circuit.

5 cl, 3 dwg