METHOD FOR PRODUCING THIN FILM RESISTOR Russian patent published in 2016 - IPC H01C17/00 

Abstract RU 2583952 C1

FIELD: electronic equipment.

SUBSTANCE: invention relates to electronic engineering, particularly to production of fixed-value resistors, and it can be used in electronics, radio engineering, and other related industries, including powerful high-frequency circuits. In the method for making thin-film resistor, which involves sputtering of resistive layer and formation of multilayer conductive structure, following deposition of the resistive layer and formation of multilayer conductive structure, a passivating film is formed on the basis of starting component of resistive layer.

EFFECT: technical result of invention consists in improvement of temperature resistance coefficient due to formation of a passivating film on the basis of starting component of resistive layer.

1 cl, 1 dwg

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RU 2 583 952 C1

Authors

Kolosov Aleksandr Borisovich

Malyshev Ilja Nikolaevich

Simakov Sergej Valerevich

Dates

2016-05-10Published

2015-01-26Filed