FIELD: chemistry.
SUBSTANCE: described is use of surface-active substances A, 1 WT% water solution of which has static surface tension of < 25 mN/m. Said surfactants A contain three short-chain perfluorinated groups Rf, selected from group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, heptafluoroizopropyl and pentafluorosulfanyl, for production of chips. Method of photolithography using surfactants A in immersion photoresist layers, photoresist layers exposed to actinic radiation, development solutions for exposed photoresist layers and/or in chemical flushing solutions for developed structured photoresists containing structures with distances between lines of less than 50 nm and with values of aspect ratio > 3.
EFFECT: surfactants A prevent destruction of structures, reduce blur of image edges, delete defects in the form of traces from water and prevent their occurrence, as well as reduce defects due to removal of particles.
15 cl, 1 dwg
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Authors
Dates
2016-05-20—Published
2012-01-17—Filed