FIELD: physics.
SUBSTANCE: invention is used for quality control of multilayer superconductors in process of manufacture. Present invention consists in that in process of making belt superconductor, investigated surface is irradiated with light flux and parameters of reflected light flux, from which refraction indices of layers are determined. Refraction indices of layers is determined using previously obtained calibration dependences of sharpness of crystallographic texture superconductor layers of refraction index. Obtained values of refraction indices are compared with ranges of values between refraction index, ensuring superconductor critical current density of not less than 1·106 A/cm2.
EFFECT: enabling mobile, high-speed control of quality of layers of belt superconductor.
1 cl, 1 tbl, 5 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF NON-DESTRUCTIVE QUALITY CONTROL OF THERMOELECTRIC MODULE THERMAL CONTACT | 2016 |
|
RU2650833C1 |
| METHOD OF PRODUCING HIGH-TEMPERATURE SUPERCONDUCTING TAPE OF THE SECOND GENERATION, MAINLY FOR CURRENT-LIMITING DEVICES, AND A METHOD OF CONTROLLING QUALITY OF SUCH TAPE | 2019 |
|
RU2707399C1 |
| METHOD FOR DETERMINING THE LINEAR COEFFICIENT OF THERMAL EXPANSION OF A THIN TRANSPARENT FILM | 2018 |
|
RU2683879C1 |
| METHOD TO DETERMINE THICKNESS OF METAL FILMS | 2014 |
|
RU2558645C1 |
| METHOD FOR FLAW INSPECTION OF SILICON FILMS ON INSULATING SUBSTRATES | 2000 |
|
RU2185684C2 |
| METHOD FOR DETERMINATION OF ELLIPSOMETRIC PARAMETERS | 2007 |
|
RU2350928C1 |
| METHOD FOR DETERMINING FILM THICKNESS | 2021 |
|
RU2787807C1 |
| METHOD TESTING SILICON FILMS ON DIELECTRIC SUBSTRATES FOR DEFECTS | 1999 |
|
RU2150158C1 |
| METHOD FOR NON-DESTRUCTIVE QUALITY CONTROL OF NEAR-SURFACE LAYER OF OPTICAL MATERIALS | 2019 |
|
RU2703830C1 |
| METHOD OF PROFILING COMPOSITION AT EPITAXIAL FORMATION OF SEMICONDUCTOR STRUCTURE BASED ON SOLID SOLUTIONS | 2019 |
|
RU2717359C1 |
