FIELD: microelectronics. SUBSTANCE: method meant for flaw inspection of integrated-circuit device layers or digital devices using silicon-on-sapphire structures is based on ellipsometer measurements of film refractive index, measurements being made before and after X-raying of structures with energy of 60-150 keV and dose rate of (2,5-4,0)10-4 Kl/kg; changes in post- irradiation refractive index point to degree of film unsoundness. EFFECT: enhanced sensitivity of flaw inspection. 2 tbl
