FIELD: chemistry.
SUBSTANCE: cleaning composition after chemical-mechanical polishing (after-CMP), comprising: (A) a compound that is cysteine, N-acetylcysteine, thiourea or a derivative thereof, (B) erythritol, (C) aqueous medium and (E) at least, one surfactant, and its use for removing residues and contaminants from the surface of semiconductor substrates containing electrically conductive layers (such as copper layers), electrically insulating dielectric insulating layers (such as dielectric layers with low or extra low dielectrical permeability) and barrier layers (such as layers of tantalum, tantalum nitride, titanium nitride or ruthenium), i. e. the invention relates to the use of a cleaning composition after CMP for removing residues and contaminants containing benzotriazole after CMP.
EFFECT: increasing the purification degree.
26 cl, 5 tbl, 3 dwg
