FIELD: chemistry.
SUBSTANCE: invention essentially relates to the composition for chemical-mechanical polishing (CMP). The composition comprises: (A) inorganic particles, organic particles, or a mixture thereof, or a composite thereof, where the particles are in cocoon form, (B) an amphiphilic non-ionic surfactant polyoxyethylene-polyoxypropylene alkyl ether as a mixture of molecules containing, on average, an alkyl group having from 10 to 16 carbon atoms, from 5 to 20 oxyethylene monomer units (b21) and from 2 to 8 oxypropylene monomer units (b22) in a random distribution, (C) an aromatic compound containing on the aromatic ring, at least, one acid group (Y) and, at least, one other functional group (Z), which is different from the acid group (Y), and (M) an aqueous medium. The method for producing semiconductor devices, including chemico-mechanical polishing of a substrate in the presence of a CMP composition, and the use of a CMP composition in a semiconductor industry are also disclosed.
EFFECT: improving the compound properties.
12 cl, 4 dwg, 3 tbl
