INSTALLATION METHOD OF RADIATION EMITTER OF SEMICONDUCTOR LASER AND RADIATION EMITTER OF SEMICONDUCTOR LASER (VERSIONS) Russian patent published in 2016 - IPC H01S5/68 H01S5/42 

Abstract RU 2589448 C1

FIELD: energy.

SUBSTANCE: method and realising devices, are based on peculiarities of semiconductor laser emitters, consisting in fact that with increase in temperature of radiator for maintaining output parameters (power, radiation force) at required for operation level is necessary to increase operating current at reduced temperature of radiator is necessary to reduce operating current. Voltage at capacitive energy storage unit varies when measuring temperature of the radiator at preset law, which provides passage through radiator pumping current required to maintain radiation power in required for operation range.

EFFECT: technical result is simplification of method and device for pumping semiconductor laser emitter, which provide maintenance of radiation power within certain limits at action of destabilising factor of temperature.

4 cl, 10 dwg

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RU 2 589 448 C1

Authors

Gusev Andrej Viktorovich

Karpov Mikhail Vladimirovich

Nazarov Yurij Mikhajlovich

Kuzin Yurij Alekseevich

Dates

2016-07-10Published

2015-05-28Filed