PULSED LASER SEMICONDUCTOR EMITTER Russian patent published in 2020 - IPC H01S5/32 H01S5/40 

FIELD: laser engineering.

SUBSTANCE: invention relates to laser equipment. Pulsed laser semiconductor emitter comprises a sealed housing with leads and a cover with a transparent window for outputting the radiation of laser diode arrays mounted on the base plane inside the housing uniformly along the circumference. There are holes in the base made with heat-conducting one, in each of which there is a heat sink with a laser diode array mounted on it. All lasers of the laser diodes are electrically connected in series with observance of polarity and are connected to the output winding of the matching pulse transformer with transformation ratio K, having a magneto-conductor operating point shift winding made of magnetic material with high saturation induction value, for example, nanocrystalline metal alloy.

EFFECT: technical result consists in enabling increase in average radiation power.

4 cl, 2 dwg