PULSED SEMICONDUCTOR LASER PUMPING SOURCE Russian patent published in 2024 - IPC H01S3/09 H03K3/02 

Abstract RU 2825865 C1

FIELD: electricity.

SUBSTANCE: invention relates to the field of current pulse shaping equipment, in particular to devices for supply of pumping sources of pulsed solid-state lasers with the storage capacitor discharge. Pumping source of a pulsed semiconductor laser is made in the form of a capacitive closed circuit consisting of series-connected storage capacitor, a choke, a pumping radiation source, a transistor switch with a control circuit and a current sensor with a current rise control circuit connected to a reference level setting device, as well as from a damping diode, together with a throttle and a pumping radiation source, which, when the switch is open, generates a second inductive circuit for supplying the pumping radiation source. Damping diode pumping radiation source and current sensor connection point is connected to zero power bus, and inductive circuit current decay control circuit is introduced, which is connected to the reference voltage control circuit and connected at the input to the connection point of the throttle with the pumping radiation source, and at the output – to the second input of the control circuit.

EFFECT: high reliability and efficiency of pumping, as well as reduced weight and dimensions of the current pulse generator.

3 cl, 5 dwg

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RU 2 825 865 C1

Authors

Vilner Valerij Grigorevich

Zemlyanov Mikhail Mikhajlovich

Kuznetsov Evgenij Viktorovich

Safutin Aleksandr Efremovich

Sedova Nadezhda Valentinovna

Dates

2024-09-02Published

2024-03-29Filed