RANDOM-ACCESS MAGNETIC MEMORY CELL Russian patent published in 2019 - IPC G11C11/15 G11C11/16 

FIELD: computer engineering.

SUBSTANCE: invention relates to the computer engineering. Magnetic random-access memory cell comprises a non-conductive substrate with a lower ferromagnetic electrode and two upper ferromagnetic electrodes, wherein lower H-shaped 4-terminal electrode has a square shape with 4 corners corresponding to its angles current paths parallel to two opposite sides of the square and configured to be connected to the current pulse generator, and upper electrodes are made in the form of ellipses with a long axis along the tracks and located in opposite quarters of the square of the lower electrode formed by crossing its diagonals, wherein long sides of said quarters are parallel to current paths, wherein upper electrodes are separated from lower electrode by tunnel dielectric and connected to insulated supply terminals, and lower ferromagnetic electrode is made from material having biaxial magnetic anisotropy in plane of substrate with axes of easy magnetization along sides of square.

EFFECT: high reliability of storing information in a MRAM cell.

1 cl, 3 dwg