FIELD: physics, computer engineering.
SUBSTANCE: invention relates to electronics, particularly to a method of recording and reading more than two bits of data for a magnetic random access memory (MRAM) cell. A MRAM cell comprises a magnetic tunnel junction formed from a read magnetic layer having a read magnetisation, and a storage layer comprising a first storage ferromagnetic layer having a first storage magnetisation, a second storage ferromagnetic layer having a second storage magnetisation. The method includes heating the magnetic tunnel junction over a high temperature threshold; orienting the first storage magnetisation at an angle relative to the second storage magnetisation for the magnetic tunnel junction to reach a resistance state level determined by the orientation of the first storage magnetisation relative to the orientation of the read magnetisation; and cooling the magnetic tunnel junction.
EFFECT: enabling storage of at least four distinct state levels in a MRAM cell using only one current line to generate a writing field.
15 cl, 14 dwg
