FIELD: electrical engineering.
SUBSTANCE: invention relates to optical radiation and radiant emissions energy converters into electrical energy. Disclosed is ionizing radiations planar converter design, including lightly doped semiconductor plate of n (p) conductivity type, in which heavily doped n+ (p+) area is located on surface of which electro-conductive cathode electrode (anode) is arranged, on upper surface of plate heavily doped p+ (n+) region is located, forming p-n-junction with semiconductor plate, on p+ (n+) area surface insulation dielectric layer and conductive electrode anode (cathode), which is radioactive isotope are located, wherein at top and bottom surfaces of low-alloyed semiconductor plate with n- (p-) type of conductivity highly doped upper and lower horizontal p+ (n+) areas are respectively located together with p-n plate making p-i-n-diode junctions, wherein they are interconnected by vertical p+ (n+) ring area, wherein upper horizontal p+ (n+) area with insulation dielectric layer and conductive cathode electrode (anode) forms storage capacitor MOS structure, on plate upper surface n+ (p+) contact area to plate of n- (p-) type of conductivity are also located, on horizontal p+ (n+) regions upper and lower surface upper and lower dielectric layers, respectively, are located, containing contact openings to n+ (p+) contact area and lower horizontal p+ (n+) region, respectively, on surface of upper and lower dielectrics upper and lower radioactive isotope - metal layers are located, forming ohmic contacts with n+ (p+) of the contact area and lower horizontal p+ (n+) area, respectively, which are p-i-n-diode cathode (anode) and anode (cathode) electrodes, respectively. Also disclosed is method of ionizing radiations planar converter design creation.
EFFECT: invention enables planar converter design creation - beta-battery with higher power and power capacity per unit volume in comparison with traditional design of p-i-n-diode.
2 cl, 5 dwg, 1 tbl
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