FIELD: electronics.
SUBSTANCE: invention relates to microelectronic equipment and can be used in high-density assembly of semiconductor crystals on various boards with large number of contact interconnections, as well as in 3-D crystal on crystal mounting. In method of vertical contact structures making on semiconductor plates or printed circuit boards with electrochemical deposition of vertical contact structure material in constant magnetic field constant magnetic field power lines are directed perpendicular to deposition surface, wherein already deposited magnetic material, which is vertical contact structure base, acts as magnetic field concentrator, and change of contact structure side surface is formed above photoresist thickness, can be changed at constant magnetic field gradient creation.
EFFECT: invention ensures reduction of vertical contact structures manufacturing labor intensity, higher quality and increased amount of obtained structures per unit area.
5 cl, 12 dwg
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