METHOD FOR ASSESSING QUALITY OF HETEROSTRUCTURE OF SEMICONDUCTOR LASER Russian patent published in 2016 - IPC H01L21/66 G01N21/84 

FIELD: electricity.

SUBSTANCE: invention relates to control over semiconductor devices. Method for assessing quality of the heterostructure of a semiconductor laser includes affecting the waveguide layer of the heterostructure of the semiconductor laser with light radiation not under the effect of interband absorption in its active area but absorbed on free carriers in the waveguide and the limiting layers of the heterostructure, recording the value of intensity of the light radiation passed through the above said layer in absence of pumping current and at a specified value of the pumping current, determination of the value of internal optical losses as per appropriate formula. If the internal optical losses value is lower than a preset value for the given type of laser, it shows high quality of the heterostructure of the semiconductor laser.

EFFECT: technical result is controlling a separate semiconductor laser in a line or a matrix of lasers at high pumping currents.

1 cl, 1 dwg