HETEROSTRUCTURE OF A HIGH-POWER SEMICONDUCTOR LASER WITH A SPECTRAL RANGE OF 1,400-1,600 nm Russian patent published in 2018 - IPC H01S5/00 

FIELD: electronic equipment.

SUBSTANCE: invention relates to quantum electronic equipment, or more precisely to high-power semiconductor lasers. Heterostructure of a semiconductor laser with a spectral range of 1,400–1,600 nm comprises InP substrate (1) on which in series are formed emitter layer (2) of InP n-type conductivity, waveguide layer (3) of AlGaInAs n-type conductivity, active region (4) based on at least two layers of quantum wells (5) of AlGaInAs, separated from each other by separation layers (6) of AlGaInAs, non-doped waveguide layer (7) of AlGaInAs, the barrier layer (8), containing at least sublayer (9) of AlInAs p-type conductivity, waveguide layer (11) of AlGaInAs p-type conductivity, emitter layer (12) of InP p-type conductivity and contact layer (13) of GaInAsP p-type conductivity. Herewith, the total thickness of waveguide layers (3), (7), (11) is not less than 1.5 mcm.

EFFECT: heterostructure provides an increase in the power of the laser made from it.

1 cl, 2 dwg