METHOD OF AMORPHOUS SILICON COATING PRODUCING ON METAL SUBSTRATE INTERNAL SURFACE Russian patent published in 2017 - IPC C23C16/24 C23C16/44 

Abstract RU 2606690 C2

FIELD: technological processes.

SUBSTANCE: present invention relates to amorphous silicon coating on metal substrate internal surface producing method and can be used in gas-bearing systems natural gas samples taking and keeping for preparation of substrate, for example, gas storage vessel or supply pipeline, in oil and gas industry products quality control systems, in commercial metering units, in quantity and quality parameters measurement systems of gas and liquefied petroleum gases in gas main lines. Performing substrate inner surface cleaning with organic solvent and its activation with mineral acid or alkali solution, silicon precursor feeding into substrate in form of silicon hydride in amount from 5 vol% to 30% vol. with mixing with inert gas in form of argon, helium, mixtures thereof or nitrogen and silicon hydride decomposition at temperature from 600 °C to 1,000 °C during from 3 to 240 minutes. In particular cases of invention implementation, supply of silicon precursor into substrate is repeated until achievement of required coating thickness with intermediate substrate blowing with inert gas. Mixture of gases produced after decomposition reaction, is repeatedly used as carrier gas.

EFFECT: providing higher quality of metal substrate internal surface coating with reduction of costs.

3 cl, 1 ex

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RU 2 606 690 C2

Authors

Morozov Georgij Sergeevich

Bakusev Ruslan Yakhiyaevich

Dates

2017-01-10Published

2015-07-13Filed