METHOD OF PRODUCING STRUCTURE Russian patent published in 2017 - IPC H01L21/762 

FIELD: electronics.

SUBSTANCE: invention can be used for creation of high-frequency structures. Core of invention is that method of making structure containing in certain order support substrate, dielectric layer, active layer, made in semiconductor material, so called separation layer of polycrystalline silicon, placed between support substrate and dielectric layer, wherein method involves following steps: step of providing donor substrate made in said semiconductor material; step of making field embrittlement in donor substrate to separate first and second parts of donor substrate on each side of field of embrittlement, wherein first part is intended for forming active layer; stage of provision of support substrate with resistivity above predetermined value; step of forming separating layer on support substrate; step of making dielectric layer on first part of donor substrate and/or on separating layer; stage of assembling donor substrate and support substrate through intermediate link of said dielectric layer and separating layer; stage of cracking donor substrate in area of embrittlement to obtain said structure; stage of reinforcing structure by annealing at least during 10 minutes after cracking; wherein said method is performed so, that polycrystalline silicon of separating layer (20) has completely random orientation of grains in at least part of thickness of separating layer (20), facing support substrate (2), and so that hardening annealing is performed at temperature strictly higher than 950 °C and lower than 1,200 °C.

EFFECT: technical result is possibility of creation of high-frequency structures without intermediate processing.

16 cl, 4 dwg