PROCESS OF MANUFACTURE OF MICROCIRCUITS WITH DIELECTRIC INSULATION OF ELEMENTS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: during process of manufacture of microcircuits protective film with windows for regions of side insulation and high-voltage transistors is formed on surface of substrate. Then epitaxial building-up of silicon is performed. Surface of structure above sections for high-voltage transistors is masked with protective film. Open sections of silicon with formation of grooves are etched in structure. Surface of structure is doped with donor to create diffusion region for "latent layer", oxidation and building-up of silicon are conducted and material of silicon substrate is taken off up to opening of bottom of isolating grooves. In monocrystal pockets low-voltage and high-voltage transistors are formed. EFFECT: increased density of packing of elements, simplification of process due to decreased depth of isolating grooves, improved electrical characteristics of microcircuits due to complete dielectric insulation of high-voltage transistors. 5 dwg