METHOD OF SEMICONDUCTOR BETA-VOLTAIC CELLS MANUFACTURING BASED ON NICKEL-63 RADIONUCLIDE Russian patent published in 2020 - IPC G21G1/00 G21H1/02 

FIELD: electrical engineering.

SUBSTANCE: invention relates to a method of making semiconductor beta-voltaic transducers based on a nickel-63 radionuclide for use in autonomous power sources. Method of producing semiconductor beta-voltaic cells based on nickel-63 radionuclide, consisting in heating metal nickel containing radionuclide ⁶³Ni, to its evaporation temperature in vacuum chamber, three-step selective photoionisation of atoms of target isotope ⁶³Ni by simultaneous pulsed irradiation of atoms with spatially aligned laser beams with wavelength 3222.566±0.001Å, 5464.006±0.001Å and 5442.195±0.001Å followed by deposition of ⁶³Ni photons by electric field on semiconductor chip surface, wherein semiconductor chip is fixed in vacuum chamber on surface of heated collector and heated to temperature of 800÷1,500 K, while increasing density of metallic nickel film due to crystallisation of ⁶³Ni, followed by cooling collector with chip to room temperature in vacuum.

EFFECT: invention enables to obtain ready beta-voltaic chips with isotopic enrichment fixed at the moment of manufacture in one device and in a single closed process.

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