FIELD: measuring equipment.
SUBSTANCE: invention relates to optoelectronic measurement equipment and can be used for measurement of semiconductor light-emitting diodes thermal parameters at different stages of their development and production, at lighting articles using light-emitting diodes manufacturers acceptance control, as well as when selecting operation modes of said articles. According to invention, specified value heating current is passed through light-emitting diode, light-emitting diode radiation is directed on monochromator input slot, at given moments in time, determining position of maximum radiation spectrum on photodetector device, located before monochromator output slot, wherein used photodetector is photodetector matrix, which lines are located perpendicular to monochromator output slot, photodetector matrix lines photosensitive elements signals are alternatively recorded and read at specified moments in time, determining photodetector matrix line element number, which signal value is maximum, according to this number change in process of light-emitting diode heating, determining wavelength change in light-emitting diode radiation spectrum maximum, according to which also determining light-emitting diode active region temperature change at specified moments in time, i.e. light-emitting diode transient thermal characteristic.
EFFECT: technical result is reduction of time for light-emitting diode transient thermal characteristic measurement.
1 cl, 3 dwg
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Authors
Dates
2017-02-06—Published
2015-06-03—Filed