FIELD: semiconductor products.
SUBSTANCE: invention relates to a technique for measuring the thermal parameters of semiconductor products (SPP). A method is proposed for measuring the thermal resistance of the junction-case and the thermal time constant of the junction-case of a semiconductor product, characterized in that in order to expand the functionality and reduce the measurement error, the duration tp the heating power pulse is set equal to 3
, where is the approximate (estimated) value of the thermal time constant junction-case of the semiconductor product, increments of the junction temperature 
at times t1≈ and t2=2t1, the value of the thermal resistance 
of the junction-case and the corrected value of the thermal time 
constant of the junction-case are additionally measured.
EFFECT: expanding the functionality of the method and reducing the error in measuring the thermal resistance of the junction-case and the thermal time constant of the junction-case of a semiconductor product.
1 cl, 4 dwg
