FIELD: semiconductors.
SUBSTANCE: method for measuring thermal characteristics of semiconductor products (SCP) in form of semiconductor devices (SCD) and integrated circuits (IC) and can be used to control the thermal parameters of SCP both at the stages of their development and production, and at the input control of SCP consumer enterprises. A method is claimed for determining parameters of a two-link thermal equivalent circuit of a semiconductor product, in which the semiconductor product is heated by a constant electric heating power of a given level P0. At given times ti during the heating process, the temperature increments Δθni(ti) of the active region of the semiconductor product are measured. In order to reduce time and reduce the error in determining the desired parameters of the temperature increment Δθni(ti) measured at times t1≈τTp-k/2, t2 =2t1, t3=3t1, t4≈τTk-s and t5=2t4, and the values of the parameters of the two-link thermal equivalent circuit are determined using formulas
τTn-k = 2t1 / ln(1 / a) ; RTn-k = (2Δθn1(t1)- Δθn2(t2))/P0(1-a)2; (1)
τTk-c = t4 / ln (1 / b) ; RTk-c = (Δθn4(t4) – P0RTn-k)/1 – b; (2)
where: a = exp(-t1/2τTn-k) = (3Δθn1(t1)- Δθn3(t3))/(2Δθn1(t1)- Δθn2(t2)) – 2; b = exp(-t4/τTk-c) = (3Δθn5(t5)- P0RTn-k)/(Δθn4(t4)- P0RTn-k) – 1; RTn-k, τTn-k = RTn-kCTn-k, CTn-k are the junction-to-case thermal resistance, thermal time constant and heat capacity, and RTk-c, τTk-c = RTk-cCTk-c, CTk-c - case-to-environment thermal resistance, thermal time constant and heat capacity of the semiconductor product, respectively.
EFFECT: reduction in time and error in determining the parameters of a two-link thermal equivalent circuit of semiconductor products.
1 cl, 2 dwg
