FIELD: technological processes.
SUBSTANCE: invention relates to film-forming solutions, which are deposited on a semiconductor substrate to form a desired diffusion layer thereon. Disclosed is a film-forming solution containing a boron compound, organic binder, silicon dioxide, aluminium oxide precursor and water and/or organic solvent, used for diffusion of boron into silicon substrate in order to form a diffusion layer of p-type. Invention also discloses a method of producing a semiconductor device using disclosed solution, a semiconductor device and a solar cell.
EFFECT: disclosed solution is applied on substrate by means of centrifugation for formation of a film coating, having sufficient amount of boron impurities, after which a diffusion layer of p-type with desired thickness with homogeneity in one plane is formed.
9 cl, 2 dwg, 8 tbl, 5 ex
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