FIELD: physics.
SUBSTANCE: invention relates to the physics of semiconductor structures. A method of power amplification of radio frequency modulated terahertz radiation of 30-period weakly bound semiconductor superlattice GaAs / AlGaAs is that the active modules are connected in parallel, each of which represents a mesa-structure of mentioned weakly bound superlattice with barriers width > 4 nm, and displace the mentioned active modules to current oscillations generation mode.
EFFECT: invention allows the linear growth of superlattice GaAs / AlGaAs power radiation at increase of the number of mesa structures.
3 dwg
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