SEMICONDUCTOR STRUCTURE FOR PHOTO-CONDUCTING ANTENNAS Russian patent published in 2018 - IPC H01L31/304 H01L31/392 

FIELD: antenna equipment.

SUBSTANCE: invention can be used in the production of transmitting and receiving antennas for the terahertz frequency range (from 300 GHz to 5 THz). Semiconductor structure for photoconducting antennas is epitaxially grown on a GaAs substrate with crystallographic orientation (111)A and consists of alternating layers of undoped low-temperature LT-GaAs and high-temperature silicon-doped GaAs:Si hole-type conductivity. LT-GaAs layers are grown at a ratio of arsenic and gallium fluxes greater than GaAs:Si layers doped with silicon and grown in a high-temperature regime.

EFFECT: invention makes it possible to control the concentration of point defects As_Ga and thus the possibility of controlling the lifetime of photoexcited charge carriers by growing matrix matrix layers of LT-GaAs at elevated arsenic pressure.

1 cl, 1 dwg