ELECTRICALLY ALTERABLE STORAGE DEVICE Russian patent published in 2017 - IPC H01L27/115 

FIELD: electricity.

SUBSTANCE: electrically alterable storage device consists of a certain order of resistive programmable memory cells formed in the chalcogenide material, which comprises of at least two memory cells. The above-mentioned memory cells have at least two interfaces between the chalcogenide films. One of the above films contains oxygen or fluorine and those of the above chalcogenide films are in contact (have an interface) with a multi-layer chalcogenide material which contains a certain concentration of electrically active donor impurities, and the above-mentioned multi-layer chalcogenide material is placed between the two above-mentioned memory cells and a plurality of electrodes comprising of the first and second electrodes and two pick-up electrodes. The above-mentioned first electrode is positioned in the lowest position and is in an electrical contact with the low area of the first memory cell. The above-mentioned second electrode is positioned on top and is in an electrical contact with the upper area of the second memory cell. The above-mentioned two pick-up electrodes are located between the above first and second electrodes and in an electrical contact with the above upper area of the first memory cell and the lower area of the above second memory cell.

EFFECT: stabilization of the polarization phase of HGS with no external stress in a wide temperature range.

20 cl, 12 dwg