REFERENCE VOLTAGE SOURCE Russian patent published in 1999 - IPC

Abstract RU 2131616 C1

FIELD: electronics, in particular, integral circuits using CMOS transistors. SUBSTANCE: device has first and second resistors 1, 2, first to third n MOS transistors 3-5, negative power supply line 6, first and second MOS transistors 7, 8, reference voltage output 9 and positive power supply line 12. Goal of invention is achieved by introduced first and second diodes and alteration of connections. EFFECT: possibility to compensate deviations in parameters of elements caused by production and use and provide temperature compensation across energy gap band. 1 dwg

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RU 2 131 616 C1

Authors

Ignat'Ev S.M.

Dates

1999-06-10Published

1998-04-29Filed