REFERENCE VOLTAGE SOURCE Russian patent published in 2018 - IPC G05F3/24 G05F3/26 

FIELD: electronic technology.

SUBSTANCE: invention relates to electronics and is intended for use in integrated circuits on complementary transistors of the metal-dielectric-semiconductor structure (MDSS). Its technical result, which consists in increasing the stability of the output voltage for the supply voltage, is achieved by introducing into the device the fourth and fifth DSS transistors 6 and 7 with an induced channel of the first conductivity type, the third and fourth DSS transistors 10 and 11 with the induced channel of the second conductivity type and the execution of their connections. This allows you to align the electric modes of DSS transistors, forming currents flowing in diodes 12 and 13. Device diagram also indicates the first and second resistors 1 and 2, the first to the third DSS transistors 3–5 with an induced channel of the first conductivity type, the first and second DSS transistors 8 and 9 with an induced channel of the second conductivity type.

EFFECT: stability of the output voltage of the device is achieved by approaching its value to the width of the forbidden zone E₀ semiconductor material.

1 cl, 1 dwg