FIELD: chemistry.
SUBSTANCE: polishing composition comprises at least water and silicon dioxide. The specific surface area of silicon dioxide is 30 m2/g or more. Silicon dioxide is used, having a particle size of 10 to 50 nm, and silicon dioxide having a particle size of 60 to 300 nm, each of which is contained in the polishing composition in an amount of 2% by weight or more. The value obtained by dividing the larger average size of said silicon dioxide particles by the smaller average size of said silicon dioxide particles is 2 or more.
EFFECT: high-speed polishing of substrates from solid and brittle material is provided, with preserving the speed over a long period of time while using the polishing composition repeatedly.
7 cl, 2 tbl
