FIELD: chemistry.
SUBSTANCE: slurry contains, wt %: colloidal silica stabilized with sodium oxide with a particle size of 75-80 nm in terms of silica - 39-40; sodium chloride - 1.2-1.4; calcined soda - 1.6-1.8 and water - up to 100.
EFFECT: increased use time for the polishing slurry, high removal rate and low surface roughness.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| POLISHING COMPOSITION | 2014 |
|
RU2646938C2 |
| METHOD OF POLISHING SEMICONDUCTOR MATERIALS | 2011 |
|
RU2457574C1 |
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|
RU2661219C2 |
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|
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| POLISH COMPOSITION FOR CHEMICAL-MECHANICAL POLISHING | 1993 |
|
RU2082738C1 |
| POLISHING COMPOSITION | 2012 |
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RU2620836C2 |
| PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR SiGe MATERIAL IN PRESENCE OF CMP (CHEMICAL MECHANICAL POLISHING) COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND | 2012 |
|
RU2605941C2 |
| POLISHING SUSPENSION AND METHOD OF CERAMIC PART POLISHING | 2006 |
|
RU2354675C1 |
| ABRASIVE PARTICLES FOR MECHANICAL POLISHING | 2004 |
|
RU2356926C2 |
Authors
Dates
2017-11-09—Published
2017-02-20—Filed