FIELD: physics.
SUBSTANCE: method of manufacturing the restrictive module on the counter-connected pin structures includes uniform thinning of the central part of the semiconductor wafer, doping both sides of the plate over the entire surface with an acceptor or donor impurity, creating local depressions exceeding the depth of the dopant, then both sides of the plate, except the cavities, are covered with a masking layer of a dielectric, and a two-sided alloying of the plate by a donor (acceptor) impurity is carried out.
EFFECT: increasing the outlet of suitable devices in percentage.
12 dwg
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